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| VRRM = IF = 1700 V 200 A Fast-Diode Die 5SLX 12M1711 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1663-01 Feb. 05 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter 1) Symbol VRRM IF IFRM Tvj Conditions min max 1700 200 Unit V A A C Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) Limited by Tvjmax -40 400 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 2) 2) Symbol VF IR Irr Qrr trr Erec Conditions IF = 200 A VR = 1700 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C IF = 200 A, VR = 900 V, di/dt = 1000 A/s, L = 800 nH, Inductive load, Switch: 2x 5SMX12M1701 Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1.4 typ 1.65 1.7 max 2.0 100 Unit V V A mA A A C C ns ns mJ mJ 4 150 192 59 98 520 700 46 75 Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12M1711 400 350 300 250 Erec [mJ] IF [A] 200 150 150 Vcc = 900 V di/dt = 1000 A/s Tvj = 125 C L = 800 nH Irr 100 300 25C 125C 125 250 200 Qrr [C], Irr [A] Qrr [C], Irr [A] 75 Qrr 150 50 100 25 50 0 0 0.5 1 VF [V] 1.5 2 2.5 0 0 50 IF [A] Erec 100 50 0 100 150 200 250 300 350 400 Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics vs. forward current 300 VCC = 900 V IF = 200 A di/dt = 1000 A/s Tvj = 125 C L = 800 nH 200 100 Vcc = 900 V IF = 200 A Tvj = 125 C L = 800 nH Irr 200 200 0 100 IR -200 75 150 Erec [mJ] 0 IF [A] -400 VR [V] 50 Erec Qrr 100 -100 -600 -200 VR -800 25 50 -300 -1000 -400 0 400 800 1200 time [ns] 1600 2000 -1200 2400 0 0 200 400 600 di/dt [A/s] 800 1000 0 1200 Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1663-01 Feb. 05 page 2 of 3 5SLX 12M1711 Mechanical properties Parameter Overall die L x W Dimensions exposed LxW front metal thickness Metallization 3) 3) Unit 13.6 x 13.6 11.6 x 11.6 385 15 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm m m m front (A) back (K) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1663-01 Feb. 05 |
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